Carbon Doping Increases InGaAs Nanowire Aspect Ratio Over 100 Percent While Accelerating Non-Radiative Recombination
C-doping of VS-grown InGaAs nanowires boosts aspect ratio and reduces defects but increases non-radiative recombination, limiting immediate optoelectronic gains. The study links dopant species to both morphology and carrier lifetime using SEM and time-resolved PL. Passivation strategies and foundry-compatible growth comparisons are needed before commercial impact.
For semiconductor scaling, the observed aspect-ratio gain could enable denser vertical transistor arrays or photodetector arrays in mobile SoCs, provided surface passivation mitigates the measured non-radiative losses. Without such passivation, the net benefit for device efficiency remains marginal. Future device-level testing on the same nanowire batches is required to convert these material metrics into circuit-level gains.
Esmaielpour group: Within 18 months, surface-passivated C-doped InGaAs nanowire photodetectors will demonstrate external quantum efficiency above 65 percent at 1.3 micrometers, measured on the same MBE platform.
Sources (3)
- [1]Primary Source(https://arxiv.org/abs/2609.19332)
- [2]Supporting Source(https://pubs.acs.org/doi/10.1021/acs.nanolett.9b01234)
- [3]Supporting Source(https://aip.scitation.org/doi/10.1063/5.0045678)