This arXiv preprint (not yet peer-reviewed) details experimental fabrication and characterization of InGaP-on-insulator microresonators, using statistical sampling across multiple ring radii to optimize quality factors while mitigating bending losses through surface treatments identified via mode-profile analysis. The approach yields record-low propagation losses of 0.49 dB/cm at telecom wavelengths and enables second-harmonic generation efficiencies exceeding prior integrated platforms by 3.5-4 times, alongside photon-pair rates of 11.7 MHz/μW with coincidence-to-accidental ratios up to 10,000. Beyond the reported results, the work addresses a key scalability gap in quantum information by providing wafer-scale χ(2) nonlinearity compatible with CMOS processes, contrasting with lithium niobate on insulator platforms that face poling uniformity challenges at scale. Earlier studies, such as those on silicon nitride resonators for spontaneous four-wave mixing, often traded efficiency for low loss; this InGaP advance synthesizes high nonlinearity with improved visible-range performance, potentially bridging to hybrid quantum networks. Limitations include unaddressed long-term stability under high pump powers and incomplete integration with on-chip detectors or sources, which could constrain deployment in large-scale entanglement distribution. Connections to broader patterns in photonic quantum tech, including recent demonstrations of entanglement swapping in similar materials, suggest this could accelerate fault-tolerant quantum computing timelines by reducing reliance on bulky bulk-optic setups.